Finfets And Other Multi Gate Transistors Pdf
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- Simulation of multigate SOI transistors with silicon, germanium and III-V channels
- FinFETs and Other Multi-Gate Transistors
- finfets and other multi-gate transistors || multigate mosfet technology
Simulation of multigate SOI transistors with silicon, germanium and III-V channels
Embed Size px x x x x Manufacturing a self-aligned double-gate MOSFET has been the holy grail of device engineers and researchers ever since it was proposed by Sekigawa and Hayashi in Hisamoto et al. Figure 2. The oxide under the Si fin was formed through LOCOS oxidation while the Si fin was protected by the nitride hard mask and a nitride spacer prior to the oxidation process. The fin pattern and the critical dimension of fin width FinWIDTH can be defined by optical lithography or by spacer image transfer SIT , followed by plasma etching.
Skip to search form Skip to main content You are currently offline. Some features of the site may not work correctly. DOI: Colinge Published Engineering. It explains the physics and properties of these devices, how they are fabricated and how circuit designers can use them to improve the performances of integrated circuits. View via Publisher.
FinFETs and Other Multi-Gate Transistors
The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. Multigate transistors are one of several strategies being developed by CMOS semiconductor manufacturers to create ever-smaller microprocessors and memory cells , colloquially referred to as extending Moore's Law. Planar transistors have been the core of integrated circuits for several decades, during which the size of the individual transistors has steadily decreased. As the size decreases, planar transistors increasingly suffer from the undesirable short-channel effect, especially "off-state" leakage current, which increases the idle power required by the device. In a multigate device, the channel is surrounded by several gates on multiple surfaces, allowing more effective suppression of "off-state" leakage current. Multiple gates also allow enhanced current in the "on" state, also known as drive current.
finfets and other multi-gate transistors || multigate mosfet technology
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A fin field-effect transistor FinFET is a multigate device , a MOSFET metal-oxide-semiconductor field-effect transistor built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel, forming a double gate structure. The FinFET devices have significantly faster switching times and higher current density than planar CMOS complementary metal-oxide-semiconductor technology.
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